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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Photo Mfr. Part # Stock Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SS25 M4G

SS25 M4G

DIODE SCHOTTKY 50V 2A DO214AA

Taiwan Semiconductor Corporation

3215

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SS25 M4G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR103 A0G

SR103 A0G

DIODE SCHOTTKY 30V 1A DO204AL

Taiwan Semiconductor Corporation

2606

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SR103 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
SR306HA0G

SR306HA0G

DIODE SCHOTTKY 60V 3A DO201AD

Taiwan Semiconductor Corporation

3386

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SR306HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 700 mV @ 3 A
S1AB M4G

S1AB M4G

DIODE GEN PURP 50V 1A DO214AA

Taiwan Semiconductor Corporation

3112

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S1AB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SF27G B0G

SF27G B0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

3403

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SF27G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR820 C0G

MUR820 C0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

3679

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MUR820 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 25 ns 5 µA @ 200 V 200 V 8A -55°C ~ 175°C 975 mV @ 8 A
SS25HM4G

SS25HM4G

DIODE SCHOTTKY 50V 2A DO214AA

Taiwan Semiconductor Corporation

2183

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SS25HM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR103HA0G

SR103HA0G

DIODE SCHOTTKY 30V 1A DO204AL

Taiwan Semiconductor Corporation

3882

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SR103HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
SR309 A0G

SR309 A0G

DIODE SCHOTTKY 90V 3A DO201AD

Taiwan Semiconductor Corporation

2858

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SR309 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1AHM2G

S1AHM2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation

2646

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S1AHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF27GHB0G

SF27GHB0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2655

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SF27GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR820HC0G

MUR820HC0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

3338

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MUR820HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 5 µA @ 200 V 200 V 8A -55°C ~ 175°C 975 mV @ 8 A
SS25L M2G

SS25L M2G

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

2724

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SS25L M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR104HA0G

SR104HA0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation

3607

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SR104HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 1A -55°C ~ 125°C 550 mV @ 1 A
SR309HA0G

SR309HA0G

DIODE SCHOTTKY 90V 3A DO201AD

Taiwan Semiconductor Corporation

3861

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SR309HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1AL M2G

S1AL M2G

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

2487

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S1AL M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF28G B0G

SF28G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2849

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SF28G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR840 C0G

MUR840 C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2787

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MUR840 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 50 ns 5 µA @ 400 V 400 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS25L MHG

SS25L MHG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3386

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SS25L MHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR105HA0G

SR105HA0G

DIODE SCHOTTKY 50V 1A DO204AL

Taiwan Semiconductor Corporation

2568

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SR105HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 700 mV @ 1 A
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